| PART |
Description |
Maker |
| 3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| 3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
